PART |
Description |
Maker |
MMG3012NT1-12 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor...
|
MMZ09312BT1 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor
|
MMG3009NT108 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3008NT1 MMG3008NT108 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3014NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3002NT1 MMG3002NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3013NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3006NT1 MMG3006NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMA20312B |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor...
|
MT3S111TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
HMC534LP5 HMC534LP5E |
Heterojunction Bipolar Transistor (HBT) MMIC VCOs. MMIC VCO W/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 10.6 - 11.8 GHZ
|
Hittite Microwave Corporation
|